shantou huashan electronic devices co.,ltd . n-channel enhancement mode field effect transistor applications ? servo motor control. ? power mosfet gate drivers. ? dc/dc converters ? other switching applications. features ? 75a, 80v(see note), r ds (on) < 13mv ? @v gs = 10 v ? fast switching ? 100% avalanche tested ? minimize input capaci tance and gate charge ? equivalent type:me75n80c maximum ratings ta=25 unless otherwise specified thermal characteristics symbol items to-220 unit rthj-case thermal resistance junction-case max 2.0 /w rthj-amb thermal resistance junction-ambient max 62.5 /w t stg storage temperature ------------------------------------------------------ - 55~150 t j operating junction temperature -------------------------------------------------- 150 v dss drain-source voltage ----------------------------------------------------------80v v gss gate-source voltage --------------------------------------------------------------------------- 20v i d drain current (continuous)(t c =25 ) ----------------------------------------------------------- 75a i dm pulsed drain current (note 1)----------- ------------------------------------------------------ 300a p d maximum power dissipation (t c =25 ) ------------------------------------------------------ 75w (t a =25 ) ----------------------- -------------------------------- 4w e as pulsed avalanche energy (note 2) ----------------------------------------------------------- 400mj HFP75N80C 1- g 2-d 3-s to-220
shantou huashan electronic devices co.,ltd . electrical characteristics ta=25 unless otherwise specified symbol items min. typ. max. unit conditions off characteristics bv dss drain-source breakdown voltage 80 v i d =250 a ,v gs =0v i dss zero gate voltage drain current 1 a v ds =80v, v gs =0v i gss gate ? body leakage 100 na v gs = 20v , v ds =0v on characteristics v gs(th) gate threshold voltage 4.0 6.5 v v ds = v gs , i d =250 a r ds(on) static drain-source on-resistance 13 m ? v gs =10v, i d =40a (note 3) dynamic characteri stics and switching characteristics ciss input capacitance 7400 pf coss output capacitance 450 pf crss reverse transfer capacitance 140 pf v ds = 20 v, v gs = 0v, f = 1.0 mhz t d(on) turn - on delay time 80 ns tr rise time 37 ns t d(off) turn - off delay time 140 ns t f fall time 27 ns v ds = 30v, v gs = 10 v, r l =15 ,r g = 10 ? (note 3) qg total gate charge 120 nc qgs gate?source charge 54 nc qgd gate?drain charge 38 nc v ds =60v, id =75 a, v gs = 10v (note 3) rg gate resistance 2.3 ? f=1mhz drain-source diode charact eristics and maximun ratings i s continuous source?drain diode forward current 75 a i sm pulsed drain-source diode forward current 300 a v sd source?drain diode forward on?voltage 1.5 v i s =25a,v gs =0(note 3) notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i d =30a, v dd =37.5v, starting t j =25 3. pulse test: pulse width 300 s, duty cycle 2% HFP75N80C
shantou huashan electronic devices co.,ltd . typical characteristics HFP75N80C
shantou huashan electronic devices co.,ltd . typical characteristics HFP75N80C
shantou huashan electronic devices co.,ltd . typical characteristics HFP75N80C
shantou huashan electronic devices co.,ltd . typical characteristics HFP75N80C
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